KIMOTO, Tsunenobu : rechercher sur Z-Library

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1

Wide Bandgap Semiconductor Power Devices || SiC material properties

Kimoto, Tsunenobu

Année:

2019

Langue:

english

Fichier:

PDF, 2.64 MB

english, 2019

2

Bulk and epitaxial growth of silicon carbide

Kimoto, Tsunenobu

Journal:

Progress in Crystal Growth and Characterization of Materials

Année:

2016

Langue:

english

Fichier:

PDF, 3.51 MB

english, 2016

3

Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal–Oxide–Semiconductor Devices

Noborio, Masato, Grieb, Michael, Bauer, Anton J., Peters, Dethard, Friedrichs, Peter, Suda, Jun, Kimoto, Tsunenobu

Journal:

Japanese Journal of Applied Physics

Année:

2011

Langue:

english

Fichier:

PDF, 547 KB

english, 2011

4

Temperature and doping dependencies of electrical properties in Al-doped 4H-SiC epitaxial layers

Koizumi, Atsushi, Suda, Jun, Kimoto, Tsunenobu

Journal:

Journal of Applied Physics

Année:

2009

Langue:

english

Fichier:

PDF, 402 KB

english, 2009

5

[IEEE 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Bruges, Belgium (2012.06.3-2012.06.7)] 2012 24th International Symposium on Power Semiconductor Devices and ICs - Breakdown characteristics of 12–20 kV-class 4H-SiC PiN diodes with improved junction termination structures

Niwa, Hiroki, Feng, Gan, Suda, Jun, Kimoto, Tsunenobu

Année:

2012

Langue:

english

Fichier:

PDF, 1.12 MB

english, 2012

6

Silicon Carbide (Volume 1: Growth, Defects, and Novel Applications) || Optical Properties of As-Grown and Process-Induced Stacking Faults in 4H-SiC

Friedrichs, Peter, Kimoto, Tsunenobu, Ley, Lothar, Pensl, Gerhard

Année:

2009

Langue:

english

Fichier:

PDF, 1.36 MB

english, 2009

7

[IEEE 2013 IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Columbus, OH, USA (2013.10.27-2013.10.29)] The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications - Physics of SiC MOS interface and development of trench MOSFETs

Kimoto, Tsunenobu, Yoshioka, Hironori, Nakamura, Takashi

Année:

2013

Langue:

english

Fichier:

PDF, 410 KB

english, 2013

8

Enhanced Current Gain (>250) in 4H-SiC Bipolar Junction Transistors by a Deep-Level-Reduction Process

Miyake, Hiroki, Kimoto, Tsunenobu, Suda, Jun

Journal:

Materials Science Forum

Année:

2012

Langue:

english

Fichier:

PDF, 409 KB

english, 2012

9

SPIE Proceedings [SPIE SPIE MOEMS-MEMS - San Francisco, California (Saturday 22 January 2011)] Micromachining and Microfabrication Process Technology XVI - Fabrication of electrostatic-actuated single-crystalline 4H-SiC bridge structures by photoelectrochemical etching

Watanabe, Naoki, Maher, Mary Ann, Chiao, Jung-Chih, Kimoto, Tsunenobu, Suda, Jun, Resnick, Paul J.

Année:

2011

Langue:

english

Fichier:

PDF, 1.46 MB

english, 2011

10

Fundamentals of Silicon Carbide Technology (Growth, Characterization, Devices, and Applications) || Appendix A: Incomplete Dopant Ionization in 4H-SiC

Kimoto, Tsunenobu, Cooper, James A.

Année:

2014

Langue:

english

Fichier:

PDF, 704 KB

english, 2014

11

Carrier Lifetime and Breakdown Phenomena in SiC Power Device Material

Kimoto, Tsunenobu, Niwa, Hiroki, Okuda, Takafumi, Saitoh, Eiji, Zhao, Yingxin, Asada, Satoshi, Suda, Jun

Journal:

Journal of Physics D Applied Physics

Année:

2018

Langue:

english

Fichier:

PDF, 1.49 MB

english, 2018

12

4H-SiC MISFETs with nitrogen-containing insulators

Masato Noborio, Jun Suda, Svetlana Beljakowa, Michael Krieger, Tsunenobu Kimoto

Journal:

physica status solidi (a)

Année:

2009

Langue:

english

Fichier:

PDF, 2.69 MB

english, 2009

13

The temperature dependence of the refractive indices of GaN and AlN from room temperature up to 515âÂ°C

Watanabe, Naoki, Kimoto, Tsunenobu, Suda, Jun

Journal:

Journal of Applied Physics

Année:

2008

Langue:

english

Fichier:

PDF, 582 KB

english, 2008

14

Radiation-induced defect centers in 4H silicon carbide

Dalibor, Thomas, Pensl, Gerhard, Kimoto, Tsunenobu, Matsunami, Hiroyuki, Sridhara, Shankar, Devaty, Robert P., Choyke, Wolfgang J.

Journal:

Diamond and Related Materials

Année:

1997

Langue:

english

Fichier:

PDF, 593 KB

english, 1997

15

Fundamentals of Silicon Carbide Technology (Growth, Characterization, Devices, and Applications) || Physical Properties of Silicon Carbide

Kimoto, Tsunenobu, Cooper, James A.

Année:

2014

Langue:

english

Fichier:

PDF, 1.28 MB

english, 2014

16

Measuring Terminal Capacitance and Its Voltage Dependency for High-Voltage Power Devices

Funaki, Tsuyoshi, Phankong, Nathabhat, Kimoto, Tsunenobu, Hikihara, Takashi

Journal:

IEEE Transactions on Power Electronics

Année:

2009

Langue:

english

Fichier:

PDF, 879 KB

english, 2009

17

Fundamentals of Silicon Carbide Technology (Growth, Characterization, Devices, and Applications) || Device Processing of Silicon Carbide

Kimoto, Tsunenobu, Cooper, James A.

Année:

2014

Langue:

english

Fichier:

PDF, 5.97 MB

english, 2014

18

Temperature Dependence of Impact Ionization Coefficients in 4H-SiC

Niwa, Hiroki, Suda, Jun, Kimoto, Tsunenobu

Journal:

Materials Science Forum

Année:

2014

Langue:

english

Fichier:

PDF, 404 KB

english, 2014

19

Implantation of Al and B Acceptors into Alpha-SiC and pn Junction Diodes

Takemura, O., Kimoto, Tsunenobu, Matsunami, Hiroyuki, Nakata, Toshitake, Watanabe, Masanori, Inoue, M.

Journal:

Materials Science Forum

Année:

1998

Fichier:

PDF, 366 KB

1998

20

Hall scattering factors in p-type 4H-SiC with various doping concentrations

Asada, Satoshi, Okuda, Takafumi, Kimoto, Tsunenobu, Suda, Jun

Journal:

Applied Physics Express

Année:

2016

Langue:

english

Fichier:

PDF, 925 KB

english, 2016

21

Estimation of Threshold Voltage in SiC Short-Channel MOSFETs

Tachiki, Keita, Ono, Takahisa, Kobayashi, Takuma, Tanaka, Hajime, Kimoto, Tsunenobu

Journal:

IEEE Transactions on Electron Devices

Année:

2018

Langue:

english

Fichier:

PDF, 1.06 MB

english, 2018

22

Analytical formula for temperature dependence of resistivity in p-type 4H-SiC with wide-range doping concentrations

Asada, Satoshi, Suda, Jun, Kimoto, Tsunenobu

Journal:

Japanese Journal of Applied Physics

Année:

2018

Langue:

english

Fichier:

PDF, 806 KB

english, 2018

23

Temperature dependence of current gain in 4H-SiC bipolar junction transistors

Asada, Satoshi, Okuda, Takafumi, Kimoto, Tsunenobu, Suda, Jun

Journal:

Japanese Journal of Applied Physics

Année:

2015

Langue:

english

Fichier:

PDF, 538 KB

english, 2015

24

High-voltage 4H-SiC pn diodes fabricated by p-type ion implantation

Yuuki Negoro, Tsunenobu Kimoto, Hiroyuki Matsunami

Journal:

Electronics and Communications in Japan (Part II: Electronics))

Année:

2003

Langue:

english

Fichier:

PDF, 1.76 MB

english, 2003

25

Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition

Tsutomu Hori, Katsunori Danno, Tsunenobu Kimoto

Journal:

Journal of Crystal Growth

Année:

2007

Langue:

english

Fichier:

PDF, 765 KB

english, 2007

26

Erratum to “Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition”: [J. Crystal Growth 306 (2007) 297]

Tsutomu Hori, Katsunori Danno, Tsunenobu Kimoto

Journal:

Journal of Crystal Growth

Année:

2007

Langue:

english

Fichier:

PDF, 346 KB

english, 2007

27

Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors

Gerhard Pensl, Svetlana Beljakowa, Thomas Frank, Kunyuan Gao, Florian Speck, Thomas Seyller, Lothar Ley, Florin Ciobanu, Valery Afanas'ev, Andre Stesmans, Tsunenobu Kimoto, Adolf Schöner

Journal:

physica status solidi (b)

Année:

2008

Langue:

english

Fichier:

PDF, 1.11 MB

english, 2008

28

Generation of very fast states by nitridation of the SiO2/SiC interface

Yoshioka, Hironori, Nakamura, Takashi, Kimoto, Tsunenobu

Journal:

Journal of Applied Physics

Année:

2012

Langue:

english

Fichier:

PDF, 1.08 MB

english, 2012

29

Thermal instability effects in SiC Power MOSFETs

Alberto Castellazzi, Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara

Journal:

Microelectronics Reliability

Année:

2012

Langue:

english

Fichier:

PDF, 1.06 MB

english, 2012

30

Power Conversion With SiC Devices at Extremely High Ambient Temperatures

Funaki, Tsuyoshi, Balda, Juan Carlos, Junghans, Jeremy, Kashyap, Avinash S., Mantooth, H. Alan, Barlow, Fred, Kimoto, Tsunenobu, Hikihara, Takashi

Journal:

IEEE Transactions on Power Electronics

Année:

2007

Langue:

english

Fichier:

PDF, 862 KB

english, 2007

31

Evaluation of High Frequency Switching Capability of SiC Schottky Barrier Diode, Based on Junction Capacitance Model

Funaki, Tsuyoshi, Kimoto, Tsunenobu, Hikihara, Takashi

Journal:

IEEE Transactions on Power Electronics

Année:

2008

Langue:

english

Fichier:

PDF, 925 KB

english, 2008

32

Accurate evaluation of interface state density in SiC metal-oxide-semiconductor structures using surface potential based on depletion capacitance

Yoshioka, Hironori, Nakamura, Takashi, Kimoto, Tsunenobu

Journal:

Journal of Applied Physics

Année:

2012

Langue:

english

Fichier:

PDF, 669 KB

english, 2012

33

Step-controlled epitaxy of SiC: High-quality homoepitaxial growth

Matsunami, Hiroyuki, Kimoto, Tsunenobu

Journal:

Diamond and Related Materials

Année:

1998

Langue:

english

Fichier:

PDF, 830 KB

english, 1998

34

Surface polarity dependence in step-controlled epitaxy: progress in SiC epitaxy

Matsunami, Hiroyuki, Kimoto, Tsunenobu

Journal:

Diamond and Related Materials

Année:

1997

Langue:

english

Fichier:

PDF, 869 KB

english, 1997

35

Effects of Nitridation on 4H-SiC MOSFETs Fabricated on Various Crystal Faces

Nanen, Yuichiro, Kato, Muneharu, Suda, Jun, Kimoto, Tsunenobu

Journal:

IEEE Transactions on Electron Devices

Année:

2013

Langue:

english

Fichier:

PDF, 151 KB

english, 2013

36

Fundamentals of Silicon Carbide Technology (Growth, Characterization, Devices, and Applications) || Characterization Techniques and Defects in Silicon Carbide

Kimoto, Tsunenobu, Cooper, James A.

Année:

2014

Langue:

english

Fichier:

PDF, 4.60 MB

english, 2014

37

Step bunching in chemical vapor deposition of 6H– and 4H–SiC on vicinal SiC(0001) faces

Kimoto, Tsunenobu, Itoh, Akira, Matsunami, Hiroyuki

Journal:

Applied Physics Letters

Année:

1995

Langue:

english

Fichier:

PDF, 579 KB

english, 1995

38

[IEEE 2010 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2010.06.15-2010.06.17)] 2010 Symposium on VLSI Technology - SiC technologies for future energy electronics

Kimoto, Tsunenobu

Année:

2010

Langue:

english

Fichier:

PDF, 315 KB

english, 2010

39

[IEEE ESSDERC 2013 - 43rd European Solid State Device Research Conference - Bucharest, Romania (2013.09.16-2013.09.20)] 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) - Ultrahigh-voltage SiC devices for future power infrastructure

Kimoto, Tsunenobu

Année:

2013

Langue:

english

Fichier:

PDF, 899 KB

english, 2013

40

[IEEE IC's (ISPSD) - Orlando, FL, USA (2008.05.18-2008.05.22)] 2008 20th International Symposium on Power Semiconductor Devices and IC's - 4H-SiC Double RESURF MOSFETs with a Record Performance by Increasing RESURF Dose

Noborio, Masato, Suda, Jun, Kimoto, Tsunenobu

Année:

2008

Langue:

english

Fichier:

PDF, 203 KB

english, 2008

41

Identification of dislocations in 4H-SiC epitaxial layers and substrates using photoluminescence imaging

Kawahara, Chihiro, Suda, Jun, Kimoto, Tsunenobu

Journal:

Japanese Journal of Applied Physics

Année:

2014

Langue:

english

Fichier:

PDF, 858 KB

english, 2014

42

High-quality 4H-SiC homoepitaxial layers grown by step-controlled epitaxy

Itoh, Akira, Akita, Hironobu, Kimoto, Tsunenobu, Matsunami, Hiroyuki

Journal:

Applied Physics Letters

Année:

1994

Langue:

english

Fichier:

PDF, 677 KB

english, 1994

43

Deep-ultraviolet micro-Raman investigation of surface defects in a 4H–SiC homoepitaxially grown film

Tomita, Takuro, Matsuo, Shigeki, Okada, Tatsuya, Kimoto, Tsunenobu, Matsunami, Hiroyuki, Mitani, Takeshi, Nakashima, Shin-Ichi

Journal:

Applied Physics Letters

Année:

2005

Langue:

english

Fichier:

PDF, 465 KB

english, 2005

44

[IEEE 2014 IEEE Custom Integrated Circuits Conference - CICC 2014 - San Jose, CA, USA (2014.9.15-2014.9.17)] Proceedings of the IEEE 2014 Custom Integrated Circuits Conference - Progress and future challenges of silicon carbide devices for integrated circuits

Kimoto, Tsunenobu

Année:

2014

Langue:

english

Fichier:

PDF, 271 KB

english, 2014

45

Triple Shockley type stacking faults in 4H-SiC epilayers

Feng, Gan, Suda, Jun, Kimoto, Tsunenobu

Journal:

Applied Physics Letters

Année:

2009

Langue:

english

Fichier:

PDF, 654 KB

english, 2009

46

[IEEE IC's (ISPSD) - San Diego, CA, USA (2011.05.23-2011.05.26)] 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs - 4H-SiC bipolar junction transistors with record current gains of 257 on (0001) and 335 on (000–1)

Miyake, Hiroki, Kimoto, Tsunenobu, Suda, Jun

Année:

2011

Langue:

english

Fichier:

PDF, 493 KB

english, 2011

47

High-energy (MeV) Al and B ion implantations into 4H-SiC and fabrication of pin diodes

Kimoto, Tsunenobu, Miyamoto, Nao, Schöner, Adolf, Saitoh, Akira, Matsunami, Hiroyuki, Asano, Katsunori, Sugawara, Yoshitaka

Journal:

Journal of Applied Physics

Année:

2002

Langue:

english

Fichier:

PDF, 704 KB

english, 2002

48

Surface Morphological Structures of 4H-, 6H- and 15R-SiC (0001) Epitaxial Layers Grown by Chemical Vapor Deposition

Kimoto, Tsunenobu, Chen, Zhi Ying, Tamura, Satoshi, Nakamura, Shun-ichi, Onojima, Norio, Matsunami, Hiroyuki

Journal:

Japanese Journal of Applied Physics

Année:

2001

Langue:

english

Fichier:

PDF, 686 KB

english, 2001

49

Fundamentals of Silicon Carbide Technology (Growth, Characterization, Devices, and Applications) || Unipolar and Bipolar Power Diodes

Kimoto, Tsunenobu, Cooper, James A.

Année:

2014

Langue:

english

Fichier:

PDF, 1.65 MB

english, 2014

50

Accurate Characterization of Interface State Density of SiC MOS Structures and the Impacts on Channel Mobility

Yoshioka, Hironori, Nakamura, Takashi, Senzaki, Junji, Shimozato, Atsushi, Tanaka, Yasunori, Okumura, Hajime, Kimoto, Tsunenobu

Journal:

Materials Science Forum

Année:

2014

Langue:

english

Fichier:

PDF, 241 KB

english, 2014